System and method for selectively increasing surface temperature of an object

ABSTRACT

A system and method for selectively increasing the thermal effect of a radiant energy source to the surface of an object relative to the substrate is described in the context of rapid thermal processing of semiconductor wafers, and apparatus produced therefrom. A radiation-absorptive atmosphere is introduced between the radiant energy source and the object to increase conductive heat transfer to the surface of the object and reduce the available radiant heat transfer to the substrate, thereby increasing the thermal effect to the surface relative to the substrate.

FIELD OF THE INVENTION

[0001] The present invention relates to selectively increasing surfacelayer temperature during radiant heating, and more specifically to theuse of thermal radiation-absorptive gasses to selectively increase thesurface temperature of a semiconductor wafer in relation to thesubstrate during Rapid Thermal Processing.

BACKGROUND OF THE INVENTION

[0002] Integrated circuits are often fabricated with one or moredevices, which may include diodes, capacitors, and different varietiesof transistors. These devices often have microscopic features that canonly be manufactured with critical processing steps that require carefulalignment of equipment used to build the devices. These microscopicfeatures contain critical dimensions that will often define theperformance of the device and its surrounding circuitry.

[0003] Additionally, the functionality of these devices is defined bycreating precisely controlled regions of dopants within the variouslayers of a semiconductor wafer. These dopants, however, are susceptibleto diffusion at elevated temperatures.

[0004] Semiconductor fabrication continues to advance, requiring finerdimensional tolerances and control. Modern integrated circuit design hasadvanced to the point where line width may be 0.25 microns or less, withjunction depths on the order of 1500-2000 Angstroms. Thus, thermaleffect to a semiconductor wafer must be reduced to limit the lateraldiffusion of the dopants, and the associated broadening of linedimension. Thermal effect to a semiconductor wafer must also be limitedto reduce forward diffusion of the dopants so junction depth does notshift.

[0005] An additional potential adverse effect of thermal treatment ischemical change of the materials utilized in the fabrication of asemiconductor wafer. As an example, refractory metal-silicide films maybe formed during the fabrication of very large scale integration (VLSI)circuits as a gate or interconnect film. These refractorymetal-silicides can be reduced to their elemental constituents underelevated thermal conditions, thus destroying the functionality of thedevice.

[0006] In an effort to reduce the magnitude of thermal requirements, andthus lessen the likelihood of adverse effects, differing processes havebeen developed. One such process is Rapid Thermal Processing (RTP). RTPis a short-duration, high-temperature, radiant-heating process. RTP maybe found in a multitude of semiconductor fabrication processes in avariety of forms, including rapid thermal annealing (RTA), rapid thermalcleaning (RTC), rapid thermal chemical vapor deposition (RTCVD), rapidthermal oxidation (RTO), and rapid thermal nitridation (RTN).

[0007] RTP seeks to minimize the negative effects of necessary thermaltreatments, and thus reduce the thermal budget of a semiconductor wafer,by subjecting the semiconductor wafer to high temperatures (typically420-1150° C.) only long enough to achieve the desired process effect.Systems are commercially available to perform RTP and generally utilizelarge-area incoherent energy sources such as radiant heat lampsoperating in the wavelengths of 0.5 to 3 μm. RTP systems typicallythermally isolate the semiconductor wafer being processed such thatradiant heating is the dominant mode of transfer, seeking to minimizeheat transfer by conduction at the wafer surface or convection aroundthe wafer surface.

[0008] RTP was started as a research technique some 25 years ago usingpulsed laser beams. As the semiconductor industry continues its trendinto submicron devices, RTP is becoming a core technology step in thedevelopment and mass production of ultra-large system integration (ULSI)devices. Since their introduction more than a decade ago, RTP processorsemploying incoherent lamps are now the mainstay.

[0009] Despite these prior improvements to thermal processing,difficulties still exist. To achieve desired semiconductor devicecharacteristics, temperatures and dopant implant depths must be adjustedwithin small process windows to achieve the desired process effect whilecompensating for the inevitable diffusion. As device sizes are reduced,control of implant diffusion becomes more critical. Reducing thermaleffect to the semiconductor substrate relaxes and widens the availableprocess window for control of implant diffusion.

[0010] Furthermore, in many semiconductor fabrication steps requiringheat input, the desired process effect relates only to the surface ofthe semiconductor wafer. In these cases, there is no need or desire toprovide heat input to the substrate. It should be noted that allreferences to the substrate within this disclosure shall include alllayers underlying the surface.

[0011] One such use of RTP is for a process known as contact reflowfollowing anisotropic etching. Etching in semiconductor fabricationinvolves the removal of material from the wafer surface. Anisotropicetching is typically used to describe etching occurring only in thedirection perpendicular to the wafer surface. This vertical etchingresults in sharp edges on contact holes, making them difficult to fill.Where flowable glass, such as borophosphosilicate glass (BPSG), is usedfor isolation, passivation or surface planarization, these sharp edgesmay be rounded through the process of contact reflow.

[0012] Contact reflow involves the heating or annealing of the glass tocause reflow and, therefore, rounding of surface features. With roundedsurface features, coverage of contact holes by subsequent metal filmlayers is improved. Because the process seeks only to round the surfacefeatures of the glass surface layer, heat input to the underlying layersis neither required nor desired.

[0013] In light of the foregoing, it may be desirable to selectivelyincrease the processing temperature of the surface layer of asemiconductor wafer while reducing the thermal effects to the substratethat would normally occur in pre-existing rapid thermal processing.

SUMMARY OF THE INVENTION

[0014] The invention allows the user to increase the thermal effectdelivered to the surface layer of a semiconductor wafer in relation tothe thermal effect delivered to the substrate. The desired effect isproduced by introducing radiation-absorptive gas into the heatingchamber of a radiant heating system. Thermal energy absorbed by theradiation-absorptive gas in contact with the semiconductor waferincreases heat transfer to the wafer surface through conduction whilereducing radiant heat transfer available to the substrate.Radiation-absorptive gas may be combined with a gas that absorbs onlyminimal or negligible radiant energy to thus modify or regulate thelevel of absorptivity of the atmosphere within the heating chamber.

[0015] By increasing conductive heat transfer to the surface whilereducing radiant heat transfer to the substrate, the surface willreceive more heat input relative to the substrate. The result is thatthe surface temperature can be selectively increased in relation to thesubstrate, and the thermal budget of the wafer is reduced. Consequently,semiconductor devices produced according to the invention will havereduced thermal budgets.

[0016] Using the system and technique of the invention, semiconductorfabrication steps may be accomplished with reduced thermal effects tothe semiconductor wafer substrate. At a minimum, a system suitable topractice the invention need only a radiant energy source, or radiationsource, and an atmosphere that absorbs some radiant energy given off bythe radiation source. The atmosphere must occupy the path of radiationwhich is emitted from the radiation source and directed to the surfaceof the object being heated.

[0017] In one embodiment of the invention, the atmosphere contains asingle radiation-absorptive gas.

[0018] In another embodiment of the invention, the atmosphere contains amixture of radiation-absorptive gases.

[0019] In a further embodiment of the invention, the atmosphere containsa mixture of a radiation-absorptive gas and a transparent gas.

[0020] In a still further embodiment of the invention, the atmospherecontains a mixture of a radiation-absorptive gas and two or moretransparent gases.

[0021] In yet another embodiment of the invention, the atmospherecontains a mixture of two or more radiation-absorptive gases and atransparent gas.

[0022] In a further embodiment of the invention, the atmosphere containsa mixture of two or more radiation-absorptive gases and two or moretransparent gases.

BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In the drawings, where like numerals refer to like componentsthroughout the several views:

[0024]FIG. 1A is a cross-section view of one type of a pre-existingrapid thermal processing (RTP) system.

[0025]FIG. 1B is a plan view of the RTP system taken through line 1B-1Bof FIG. 1A.

[0026]FIG. 2 is a pictorial representation of the relative radiationloss through a transparent atmosphere.

[0027]FIG. 3 is a graphical representation of the relative radiationloss through a transparent atmosphere.

[0028]FIG. 4 is a pictorial representation of the relative radiationloss through a radiation-absorptive atmosphere.

[0029]FIG. 5 is a graphical representation of the relative radiationloss through a radiation-absorptive atmosphere.

[0030]FIG. 6 is an elevation view of a semiconductor wafer containingsemiconductor dies according to one embodiment of the invention.

[0031]FIG. 7 is a block diagram of a circuit module incorporatingsemiconductor dies according to one embodiment of the invention.

[0032]FIG. 8 is a block diagram of an electronic system incorporatingcircuit modules according to one embodiment of the invention.

DESCRIPTION OF THE EMBODIMENTS

[0033] In the following detailed description, reference is made to theaccompanying drawings which form a part hereof, and in which is shown byway of illustration specific embodiments in which the invention may bepracticed. These embodiments are described in sufficient detail toenable those skilled in the art to practice the invention, and it is tobe understood that other embodiments may be utilized and thatstructural, logical and compositional changes may be made withoutdeparting from the spirit and scope of the invention. The followingdetailed description is, therefore, not to be taken in a limiting sense,and the scope of the invention is defined by the appended claims.

[0034] In general, a typical RTP system contains three major parts (seeFIG. 1A): (a) a high-power lamp system or radiation source 22 heatingthe wafer 10; (b) a chamber 18 in which the wafer 10 and an atmosphere(not depicted) are contained; and (c) a pyrometer 20 to measure thewafer temperature. The lamp system can be either a set oftungsten-halogen lamps or a high-power arc lamp with a reflector. Thewafer 10 has a backside 14 and a surface 15. The chamber 18 is generallya quartz chamber. In all cases, the lamps are separated from the waferwith a quartz window 24.

[0035] The pyrometer 20 measures the radiation that is emitted from thebackside 14 of the wafer and converts this into substrate, or wafer,temperature. Other non-invasive temperature measurement techniques basedon thermal expansion of the wafer, laser interferometry, and acousticinterference are being developed to accurately measure the temperature.The temperature measurement technique chosen, or whether temperature ismeasured at all, in no way limits the invention. As an alternative to orin addition to pyrometer 20, other sensors may be implemented to measuretemperature, reflectance, or other mechanical properties such as stresselasticity.

[0036] Other features of this typical RTP system include the quartzwafer holder 26, the process gas conduits 28, and the reflector 30. Thewafer 10 is placed or positioned on wafer holder 26 such that radiationfrom the radiation source 22 is directed at and impinges on the surface15 of wafer 10. Process gas conduits 28 act as an inlet for gas flow inthe chamber 18. Depending on the gas flow rate through process gasconduits 28, it is possible to have both free and forced convectionwithin the RTP atmosphere. Reflector 30 assists directing radiation fromradiation source 22 to the surface 15 of wafer 10. A complete RTP systemwould contain additional components, such as robotic handling elementsand staging elevators, but these are not of concern to the inventiondisclosed and claimed.

[0037] In typical RTP processing, the wafer 10 would absorb radiationprimarily through surface 15 in chamber 18 from radiation source 22.While radiation from radiation source 22 is not limited to a directionperpendicular to the surface 15 of wafer 10, such direction is areasonable approximation of the transfer of radiant energy to wafer 10.Time and temperature within chamber 18 would be directed by the desiredprocess effect.

[0038] The heating lamp system comes in four basic geometries: the linesource, the square source, the hexagonal source, and the ring source.Figure 1B is an example of the ring source lamp system, where the lampbank consists of an outer ring, middle ring, and an inner lamp or ringof lamps.

[0039] RTP is generally carried out with chamber 18 containing an inertatmosphere of Ar, N₂ or a vacuum. Oxygen and NH₃, however, havepreviously been introduced into the processing chamber of an RTP systemwhen the desired process effect is to induce the growth of SiO₂ andSi₃N₄, respectively. The RTP atmospheres are generally transparent tothe radiation source, thus allowing the radiant energy to transfer tothe wafer 10 with only negligible absorption by the atmospheresurrounding the wafer 10.

[0040] The system and process of the invention work equally well at anypressure, from pressures above atmospheric to those below atmospheric.In fact, increases or reductions in pressure can be used to selectivelyraise or lower desired absorptivity of the radiation-absorptiveatmosphere. An increase in pressure will increase the molecular densityof the gaseous atmosphere, thus allowing more absorptive gas per unitvolume and increasing the absorptivity. Likewise, a reduction inpressure will decrease the molecular density of the gaseous atmosphere,thus reducing the absorptive gas per unit volume and decreasing theabsorptivity.

[0041] As stated previously, the gas or atmosphere within chamber 18 ofpre-existing RTP systems is generally inert and transparent to theradiant energy of radiation source 22. In other words, the intensity ofthe radiant energy leaving radiation source 22 is virtually identical tothe intensity of the radiant energy arriving at the surface 15 of wafer10. FIGS. 2 and 3 are a pictorial and graphical representation of thechange in intensity of the radiant energy emitted by radiation source 22as it travels from radiation source 22, point I, to surface 15, pointI′, in chamber 18 of pre-existing RTP systems. FIGS. 2 and 3 areintended to show that there is negligible reduction in intensity ofradiant energy through the transparent atmosphere. There is no scale asthese figures are offered for conceptual representation only.

[0042] In one embodiment of the invention, a radiation-absorptive gasreplaces the transparent atmosphere in chamber 18. Theradiation-absorptive gas is chosen such that it has an increased indexof absorption, in the wavelength(s) of the radiant energy from radiationsource 22, over the transparent atmosphere generally utilized in an RTPsystem.

[0043] The radiation-absorptive gas must absorb radiation in at leastone of the wavelengths of the radiation source, and all references toradiation-absorptive gases will presume that they absorb radiation inone or more of the relevant wavelengths emitted by the providedradiation source. The relevant wavelengths of a radiation source are thedominant wavelengths providing for heat transfer to the process object.Conversely, a gas is transparent if it does not absorb radiant energy ofthe relevant wavelengths of the radiation source. Note that due to thewide range of wavelengths that may be given off by a radiation sourcedue to factors such as type, degradation or contamination, and that arenot a prominent source of heat transfer to the object, a transparent gasmay absorb wavelengths that are not relevant wavelengths.

[0044] The result of surrounding surface 15 with a radiation-absorptiveatmosphere is that the intensity of the radiant energy emitted byradiation source 22 is more significantly reduced as it travels fromradiation source 22 to surface 15. FIGS. 4 and 5 are a pictorial andgraphical representation of the change in intensity of the radiantenergy emitted by radiation source 22 as it travels from radiationsource 22, point I, to surface 15, point I′, utilizing aradiation-absorptive gas in the atmosphere of chamber 18. By utilizingthe invention, there is now a non-negligible reduction in intensity ofthe radiant energy as it travels through the absorptive atmosphere.There is no scale as these figures are offered for conceptualrepresentation only.

[0045] By providing an atmosphere with a higher propensity to absorbradiation in one or more wavelengths of the spectrum radiated byradiation source 22, two phenomena occur: 1) temperature increaseswithin chamber 18; and 2) radiant energy impinging on surface 15 isreduced.

[0046] The temperature within chamber 18 increases as energy is absorbedby the absorptive atmosphere. The absorbed energy raises the internalenergy of the absorptive atmosphere, thus increasing its temperature.There will be some increase in convective heat transfer within theatmosphere of chamber 18 as the temperature change induces convection.More importantly, however, with the temperature surrounding surface 15increased, heat transfer by conduction of the absorbed energy from theatmosphere within chamber 18 to surface 15 is increased. It isrecognized that heat transfer by conduction from surface 15 to thesubstrate of wafer 10 would also increase to some degree.

[0047] The energy absorbed by the absorptive atmosphere within chamber18 also results in decreased levels of radiation available to impinge onsurface 15. This results in a decreased level of radiant heat transferto surface 15 and wafer 10. It is believed that the decreased level ofheat transfer by radiation to wafer 10 will generally exceed theincreased level of conductive heat transfer to the substrate of wafer10. Combined, the energy transfer to surface 15 exceeds the energytransfer to the substrate of wafer 10, thus supporting the observedphenomena that equivalent process effects can be achieved at reducedsubstrate temperatures.

[0048] In an alternative embodiment of the invention, the atmosphere ofchamber 18 contains a mixture of more than one absorptive gas. Choosingabsorptive gases that absorb radiation of different wavelengths canincrease the total energy absorbed over that of each individual gas. Inaddition, mixtures of gases can interact through bonding or reaction togenerate additional absorption wavelengths. Furthermore, some individualgases will have strong absorptivity while others will be weak absorbers.Accordingly, the concentration of individual gases is guided by thedesired level of absorption of one or more wavelengths of radiant energyand is, therefore, without practical limit. Simply put, the user is freeto choose any number or combination of absorptive gases. The user canvary the individual concentrations, guided by the physicalcharacteristics of the individual gases, to achieve the desired level ofabsorption and, therefore, the desired process effect.

[0049] In a further embodiment of the invention, one or more absorptivegases may be combined with one or more transparent gases. As with allother embodiments, concentration of any individual gas is not limited.Two phenomena may occur through the addition of transparent gases.Transparent gas may act to reduce the overall level of absorbedradiation by displacing absorptive gases. Additionally, transparent gasmay aid removal of absorbed energy from an absorptive gas, therebyincreasing the overall level of absorbed radiation by increasing thenumber of unexcited absorptive molecules. Regardless of whether one orboth phenomena occur, the user is provided with an additional tool toachieve the desired level of absorption and, therefore, the desiredprocess effect.

[0050] For radiation sources operating in the wavelengths of 0.5 to 3μm, the following gases have been identified for semiconductorprocessing incorporating the invention: H₂O, Ar, H₂, CO₂, NH₃, N₂, NO₂,N₂O₃, N₂O₄, N₂O₅, NO, N₂O, He, O₃, Kr, Ne, Xe, Rn and Cl₂. Of thesegases, H₂O, CO₂, NH₃ and N₂O are of particular interest due to theirabsorptive properties in the relevant wavelengths. Furthermore, N₂ andAr are of particular interest due to their transparency in the relevantwavelengths.

[0051] Although NH₃ has previously been used as a reactant species, theinvention utilizes NH₃ for purposes other than where nitridation is thedesired process effect. An example would be glass reflow applicationswhere nitridation inhibits glass reflow. Accordingly, use of NH₃ as anabsorptive gas should occur at process conditions which do not promotenitridation. It is believed that nitridation will not occur attemperatures below about 700° C.

[0052] Determination of whether a gas is absorptive or transparent at aspecific wavelength does not require undue experimentation. Individualgases or mixtures of gas may be subjected to the science of spectroscopyto determine the absorption of light at various wavelengths.Spectrophotometers are commercially available to measure transmission orabsorption of wavelengths from the infrared (IR) and near infrared (NIR)spectra through the ultraviolet (UV) spectrum.

[0053] In an exemplary embodiment of the invention, the atmosphere of anRTP system contains an absorptive mixture of Ar, H₂ and H₂O atapproximate molar concentrations of 10-80%, 10-40% and 10-50%,respectively. The RTP system utilizes a radiation source operating inthe relevant wavelengths of 0.5 to 3 μm. A semiconductor wafer ofembedded DRAMs (Dynamic Random Access Memory) is introduced into theabsorptive atmosphere under the heating element to affect reflow of BPSGon the wafer surface without adversely affecting implant diffusion orthe integrity of Ti-salicide, a self-aligned silicide. To achieveequivalent process results of a pre-existing RTP system operating at800° C., the system of the exemplary embodiment may operate at thereduced temperature of 750° C.

[0054] With reference to FIG. 6, in one embodiment, a die 60 is producedfrom the wafer 10 processed according to the invention. A die is anindividual rectangular pattern on a semiconductor wafer that containscircuitry to perform a specific function. A semiconductor wafer willtypically contain a repeated pattern of such dies containing the samefunctionality. Die 60 may contain circuitry for a simple DRAM, asdiscussed above, or it may extend to such complex circuitry as amonolithic processor with multiple functionality. Die 60 is typicallypackaged in a protective casing (not shown) with leads extendingtherefrom (not shown) providing access to the circuitry of the die forunilateral or bilateral communication and control.

[0055] As shown in FIG. 7, two or more dies 60 may be combined, with orwithout protective casing, into a circuit module 70 to enhance or extendthe functionality of an individual die 60. Circuit module 70 may be acombination of dies 60 representing a variety of functions, or acombination of dies 60 containing the same functionality. Some examplesof a circuit module include memory modules, power modules, communicationmodules, processor modules and application-specific modules and mayinclude multilayer, multichip modules. Circuit module 70 may be asubcomponent of a variety of electronic systems, such as a clock, aradio, a dishwasher, a television, a cell phone, a personal computer, anautomobile, an automated teller machine, an industrial control system,an aircraft and others. Circuit module 70 will have a variety of leadsextending therefrom (not shown) providing unilateral or bilateralcommunication and control.

[0056]FIG. 8 shows one such electronic system 80 containing one or morecircuit modules 70. Electronic system 80 generally contains a userinterface 85. User interface 85 provides a user of the electronic system80 with some form of control or observation of the results of theelectronic system 80. Some examples of user interface 85 include thekeyboard, pointing device, CRT and printer of a personal computer; thetuning dial, display and speakers of a radio; the ignition switch andgas pedal of an automobile; and the card reader, keypad, display andcurrency dispenser of an automated teller machine. As will be apparentfrom the lists of examples previously given, electronic system 80 willoften contain certain mechanical components (not shown) in addition tocircuit modules 70 and user interface 85.

[0057] To reiterate, an absorptive gas mixture may contain anycombination of one or more absorptive gases. The absorptive gas mixturemay be void of transparent gases or it may contain one or moretransparent gases. Individual gases may exist in the absorptive gasmixture at any concentration. Concentration and choice of gases isguided by the desired process effect or level of absorption, and therelevant wavelengths of the radiation source. Of course, the summationof all individual concentrations must equal 100%.

[0058] Furthermore, in all embodiments of the invention, the realitiesof industrial processing must be recognized. Where a reference is madeto purity of the gaseous atmosphere, the reader must remember that therewill always be some incident contamination, either at the percentage,ppm, ppb or atomic level. This contamination will come from multiplesources, such as that inherently found in the gases from their source orre-use, or in their preparation; that coming from outgassing orevaporation of the object being processed or the environment of theprocessing chamber; and that introduced through leaks or other openingsin the processing chamber. Acceptable levels of contamination will bedependent on the nature and needs of the process, the processingequipment and environment utilized, and the source and nature of thematerials used. Thus, composition of the gaseous atmosphere describesthe relevant composition and disregards incident contamination.

[0059] Use of the invention provides semiconductor wafer and devicefabrication at reduced thermal budgets. Such semiconductor deviceshaving reduced thermal budgets will have improved performancecharacteristics due to reduced dopant diffusion

[0060] Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement which is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. For example, thepresent invention is not so limited to the exemplary embodiment.Furthermore, more than one object may be processed simultaneouslywithout departing from the scope herein. Additionally, those skilled inthe art will recognize that processing may occur batchwise or in acontinuous process. Therefore, this application is intended to cover anyadaptations or variations of the present invention and it is manifestlyintended that this invention be limited only by the claims and theequivalents thereof.

What is claimed is:
 1. A method of heating an object, comprising:emitting radiation of at least one wavelength capable of heating theobject thus producing at least one wavelength of emitted radiation;absorbing radiation of the at least one wavelength of emitted radiationin a radiation-absorptive atmosphere; and transferring heat to theobject through a combination of radiant heat transfer from the at leastone wavelength of emitted radiation and conductive heat transfer fromthe radiation-absorptive atmosphere.
 2. The method of claim 1 whereinabsorbing radiation occurs in a radiation-absorptive atmospherecomprising at least one radiation-absorptive gas.
 3. The method of claim1 wherein absorbing radiation occurs in a radiation-absorptiveatmosphere comprising at least one radiation-absorptive gas and at leastone transparent gas.
 4. The method of claim 1 wherein absorbingradiation occurs in a radiation-absorptive atmosphere comprising atleast one radiation-absorptive gas, further wherein the at least oneradiation-absorptive gas is a gas selected from the group consisting ofH₂O, CO₂, NH₃ and N₂O.
 5. The method of claim 1 wherein absorbingradiation occurs in a radiation-absorptive atmosphere comprising atleast one radiation-absorptive gas and at least one transparent gas,further wherein the at least one radiation-absorptive gas is a gasselected from the group consisting of H₂O, CO₂, NH₃ and N₂O, stillfurther wherein the at least one transparent gas is a gas selected fromthe group consisting of Ar and N₂.
 6. The method of claim 1 whereinabsorbing radiation occurs in a radiation-absorptive atmospherecomprising: substantially 10-80 mol % Ar; substantially 10-40 mol % H₂;and substantially 10-50 mol % H₂O.
 7. The method of claim 1 whereinemitting radiation of at least one relevant wavelength capable ofheating the object further comprises emitting at least one wavelength inthe range of 0.5 to 3.0 μm.
 8. The method of claim 1 further comprisingmaintaining the pressure of the radiation-absorptive atmosphere belowatmospheric.
 9. The method of claim 1 further comprising maintaining thepressure of the radiation-absorptive atmosphere at or above atmospheric.10. A radiant heating system for heating an object, comprising: aradiation source for directing radiation toward the object; and aradiation-absorptive atmosphere positioned between the radiation sourceand the object.
 11. The radiant heating system of claim 10 wherein theradiation-absorptive atmosphere comprises at least oneradiation-absorptive gas.
 12. The radiant heating system of claim 10wherein the radiation-absorptive atmosphere comprises at least oneradiation-absorptive gas and at least one transparent gas.
 13. Theradiant heating system of claim 10 wherein the radiation-absorptiveatmosphere comprises at least one radiation-absorptive gas, furtherwherein the at least one radiation-absorptive gas is a gas selected fromthe group consisting of H₂O, CO₂, NH₃ and N₂O.
 14. The radiant heatingsystem of claim 10 wherein the radiation-absorptive atmosphere comprisesat least one radiation-absorptive gas and at least one transparent gas,further wherein the at least one radiation-absorptive gas is a gasselected from the group consisting of H₂O, CO₂, NH₃ and N₂O, stillfurther wherein the at least one transparent gas is a gas selected fromthe group consisting of Ar and N₂.
 15. The radiant heating system ofclaim 10 wherein the radiation-absorptive atmosphere comprises:substantially 10-80 mol % Ar; substantially 10-40 mol % H₂; andsubstantially 10-50 mol % H₂O.
 16. The radiant heating system of claim10 wherein the radiation source emits radiation comprising at least onewavelength in the range of 0.5 to 3.0 μm.
 17. A method of processing asemiconductor wafer, comprising: emitting radiation of at least onewavelength capable of heating the semiconductor wafer thus producing atleast one wavelength of emitted radiation; absorbing radiation of the atleast one wavelength of emitted radiation in a radiation-absorptiveatmosphere; and transferring heat to the semiconductor wafer through acombination of radiant heat transfer from the at least one wavelength ofemitted radiation and conductive heat transfer from theradiation-absorptive atmosphere.
 18. The method of claim 17 whereinabsorbing radiation occurs in a radiation-absorptive atmospherecomprising at least one radiation-absorptive gas.
 19. The method ofclaim 17 wherein absorbing radiation occurs in a radiation-absorptiveatmosphere comprising at least one radiation-absorptive gas and at leastone transparent gas.
 20. The method of claim 17 wherein absorbingradiation occurs in a radiation-absorptive atmosphere comprising atleast one radiation-absorptive gas, further wherein the at least oneradiation-absorptive gas is a gas selected from the group consisting ofH₂O, CO₂, NH₃ and N₂O.
 21. The method of claim 17 wherein absorbingradiation occurs in a radiation-absorptive atmosphere comprising atleast one radiation-absorptive gas and at least one transparent gas,further wherein the at least one radiation-absorptive gas is a gasselected from the group consisting of H₂O, CO₂, NH₃ and N₂O, stillfurther wherein the at least one transparent gas is a gas selected fromthe group consisting of Ar and N₂.
 22. The method of claim 17 whereinabsorbing radiation occurs in a radiation-absorptive atmospherecomprising: substantially 10-80 mol % Ar; substantially 10-40 mol % H₂;and substantially 10-50 mol % H₂O.
 23. The method of claim 17 whereinemitting radiation of at least one relevant wavelength capable ofheating the semiconductor wafer further comprises emitting at least onewavelength in the range of 0.5 to 3.0 μm.
 24. The method of claim 17further comprising maintaining the pressure of the radiation-absorptiveatmosphere below atmospheric.
 25. The method of claim 17 furthercomprising maintaining the pressure of the radiation-absorptiveatmosphere at or above atmospheric.
 26. An apparatus, comprising: asemiconductor die having a reduced thermal budget, wherein thesemiconductor die is exposed to emitted radiation of at least onewavelength capable of heating the semiconductor die and aradiation-absorptive atmosphere capable of absorbing radiation of the atleast one wavelength of emitted radiation, further wherein thesemiconductor die absorbed heat through a combination of radiant heattransfer from the at least one wavelength of emitted radiation andconductive heat transfer from the radiation-absorptive atmosphere. 27.The apparatus of claim 26, wherein the at least one wavelength ofemitted radiation comprises at least one wavelength in the range of 0.5to 3.0 μm.
 28. The apparatus of claim 26, wherein theradiation-absorptive atmosphere comprises at least oneradiation-absorptive gas and at least one transparent gas, furtherwherein the at least one radiation-absorptive gas is a gas selected fromthe group consisting of H₂O, CO₂, NH₃ and N₂O, still further wherein theat least one transparent gas is a gas selected from the group consistingof Ar and N₂.
 29. An apparatus, comprising: a semiconductor die having areduced thermal budget, wherein the semiconductor die is exposed toemitted radiation of at least one wavelength capable of heating thesemiconductor die and a radiation-absorptive atmosphere capable ofabsorbing radiation of the at least one wavelength of emitted radiation,further wherein the radiation-absorptive atmosphere comprises at leastone radiation-absorptive gas selected from the group consisting of H₂O,CO₂, NH₃ and N₂O, still further wherein the semiconductor die absorbedheat through a combination of radiant heat transfer from the at leastone wavelength of emitted radiation and conductive heat transfer fromthe radiation-absorptive atmosphere.
 30. An apparatus, comprising: asemiconductor die having a reduced thermal budget, wherein thesemiconductor die is exposed to emitted radiation of at least onewavelength capable of heating the semiconductor die and aradiation-absorptive atmosphere capable of absorbing radiation of the atleast one wavelength of emitted radiation, further wherein theradiation-absorptive atmosphere comprises substantially 10-80 mol % Ar,substantially 10-40 mol % H₂, and substantially 10-50 mol % H₂O, stillfurther wherein the semiconductor die absorbed heat through acombination of radiant heat transfer from the at least one wavelength ofemitted radiation and conductive heat transfer from theradiation-absorptive atmosphere.
 31. A radiant heating system forheating an object, comprising: a radiant heating means for emittingradiation of at least one relevant wavelength capable of heating theobject; and a radiation-absorbing means for absorbing at least onerelevant wavelength from the radiant heating means and conductingabsorbed energy to the object.
 32. A method of processing asemiconductor wafer having a surface and a substrate, comprising:surrounding the semiconductor wafer surface with a radiation-absorptiveatmosphere; emitting radiation capable of heating the semiconductorwafer and the radiation-absorptive atmosphere thus producing emittedradiation; absorbing at least some of the emitted radiation in theradiation-absorptive atmosphere; absorbing at least some of the emittedradiation in the semiconductor wafer; and conducting heat to thesemiconductor wafer from the absorbed energy in the radiation-absorptiveatmosphere such that the combined energy transfer to the surface of thesemiconductor wafer exceeds the energy transfer to the substrate.
 33. Amethod of processing a semiconductor wafer having a surface and asubstrate, comprising: emitting radiation of at least one wavelengthcapable of heating the semiconductor wafer thus producing at least onewavelength of emitted radiation; absorbing radiation of the at least onewavelength of emitted radiation in a radiation-absorptive atmosphere,wherein the radiation-absorptive atmosphere comprises at least one gasselected from the group consisting of H₂O, Ar, H₂, CO₂, NH₃, N₂, NO₂,N₂O₃, N₂O₄, N₂O₅, NO, N₂O, He, O₃, Kr, Ne, Xe, Rn and Cl₂; andtransferring heat to the semiconductor wafer through a combination ofradiant heat transfer from the at least one wavelength of emittedradiation and conductive heat transfer from the radiation-absorptiveatmosphere.
 34. A circuit module, comprising: at least two semiconductordies with at least one semiconductor die having a reduced thermalbudget, wherein the at least one semiconductor die having a reducedthermal budget is exposed to emitted radiation of at least onewavelength capable of heating the at least one semiconductor die havinga reduced thermal budget and a radiation-absorptive atmosphere capableof absorbing radiation of the at least one wavelength of emittedradiation, further wherein the at least one semiconductor die having areduced thermal budget absorbed heat through a combination of radiantheat transfer from the at least one wavelength of emitted radiation andconductive heat transfer from the radiation-absorptive atmosphere. 35.The circuit module of claim 34, wherein the at least two semiconductordies comprise at least two semiconductor dies having differingfunctionality.
 36. The circuit module of claim 34, wherein the at leasttwo semiconductor dies comprise a semiconductor die in a protectivecasing.
 37. The circuit module of claim 34, wherein the at least onewavelength of emitted radiation comprises at least one wavelength in therange of 0.5 to 3.0 μm.
 38. The circuit module of claim 34, wherein theradiation-absorptive atmosphere comprises at least oneradiation-absorptive gas and at least one transparent gas, furtherwherein the at least one radiation-absorptive gas is a gas selected fromthe group consisting of H₂O, CO₂, NH₃ and N₂O, still further wherein theat least one transparent gas is a gas selected from the group consistingof Ar and N₂.
 39. A circuit module, comprising: at least twosemiconductor dies with at least one semiconductor die having a reducedthermal budget, wherein the at least one semiconductor die having areduced thermal budget is exposed to emitted radiation of at least onewavelength capable of heating the at least one semiconductor die havinga reduced thermal budget and a radiation-absorptive atmosphere capableof absorbing radiation of the at least one wavelength of emittedradiation, further wherein the radiation-absorptive atmosphere comprisesat least one radiation-absorptive gas selected from the group consistingof H₂O, CO₂, NH₃ and N₂O, still further wherein the at least onesemiconductor die having a reduced thermal budget absorbed heat througha combination of radiant heat transfer from the at least one wavelengthof emitted radiation and conductive heat transfer from theradiation-absorptive atmosphere.
 40. A circuit module, comprising: atleast two semiconductor dies with at least one semiconductor die havinga reduced thermal budget, wherein the at least one semiconductor diehaving a reduced thermal budget is exposed to emitted radiation of atleast one wavelength capable of heating the at least one semiconductordie having a reduced thermal budget and a radiation-absorptiveatmosphere capable of absorbing radiation of the at least one wavelengthof emitted radiation, further wherein the radiation-absorptiveatmosphere comprises substantially 10-80 mol % Ar, substantially 10-40mol % H₂, and substantially 10-50 mol % H₂O, still further wherein theat least one semiconductor die having a reduced thermal budget absorbedheat through a combination of radiant heat transfer from the at leastone wavelength of emitted radiation and conductive heat transfer fromthe radiation-absorptive atmosphere.
 41. An electronic system,comprising: at least one circuit module, wherein the at least onecircuit module comprises at least two semiconductor dies with at leastone semiconductor die having a reduced thermal budget, wherein the atleast one semiconductor die having a reduced thermal budget is exposedto emitted radiation of at least one wavelength capable of heating theat least one semiconductor die having a reduced thermal budget and aradiation-absorptive atmosphere capable of absorbing radiation of the atleast one wavelength of emitted radiation, further wherein the at leastone semiconductor die having a reduced thermal budget absorbed heatthrough a combination of radiant heat transfer from the at least onewavelength of emitted radiation and conductive heat transfer from theradiation-absorptive atmosphere.
 42. The electronic system of claim 41,further comprising a user interface.
 43. The electronic system of claim41, further comprising mechanical components.
 44. An electronic system,comprising: at least one circuit module, wherein the at least onecircuit module comprises at least two semiconductor dies with at leastone semiconductor die having a reduced thermal budget, wherein the atleast one semiconductor die having a reduced thermal budget is exposedto emitted radiation of at least one wavelength capable of heating theat least one semiconductor die having a reduced thermal budget and aradiation-absorptive atmosphere capable of absorbing radiation of the atleast one wavelength of emitted radiation, further wherein theradiation-absorptive atmosphere comprises at least oneradiation-absorptive gas selected from the group consisting of H₂O, CO₂,NH₃ and N₂O, still further wherein the at least one semiconductor diehaving a reduced thermal budget absorbed heat through a combination ofradiant heat transfer from the at least one wavelength of emittedradiation and conductive heat transfer from the radiation-absorptiveatmosphere.
 45. A circuit module, comprising: at least two semiconductordies with at least one semiconductor die having a reduced thermalbudget, wherein the at least one semiconductor die having a reducedthermal budget is exposed to emitted radiation of at least onewavelength capable of heating the at least one semiconductor die havinga reduced thermal budget and a radiation-absorptive atmosphere capableof absorbing radiation of the at least one wavelength of emittedradiation, further wherein the radiation-absorptive atmosphere comprisessubstantially 10-80 mol % Ar, substantially 10-40 mol % H₂, andsubstantially 10-50 mol % H₂O, still further wherein the at least onesemiconductor die having a reduced thermal budget absorbed heat througha combination of radiant heat transfer from the at least one wavelengthof emitted radiation and conductive heat transfer from theradiation-absorptive atmosphere.
 46. A method of processing asemiconductor wafer having a surface and a substrate, comprising:emitting radiation of at least one wavelength in the range of 0.5 to 3.0μm; absorbing radiation of the at least one wavelength in the range of0.5 to 3.0 μm in a radiation-absorptive atmosphere, wherein theradiation-absorptive atmosphere comprises substantially 10-80 mol % Ar,substantially 10-40 mol % H₂, and substantially 10-50 mol % H₂O;transferring heat to the semiconductor wafer through radiant heattransfer from the at least one wavelength in the range of 0.5 to 3.0 μm;and transferring heat to the surface of the semiconductor wafer throughconductive heat transfer from the radiation-absorptive atmosphere.
 47. Amethod of annealing glass on a surface of a semiconductor wafer having asubstrate, comprising: emitting radiation of at least one wavelengthcapable of heating the semiconductor wafer thus producing at least onewavelength of emitted radiation; absorbing radiation of the at least onewavelength of emitted radiation in a radiation-absorptive atmosphere,wherein the radiation-absorptive atmosphere comprises at least one gasselected from the group consisting of H₂O, Ar, H₂, CO₂, NH₃, N₂, NO₂,N₂O₃, N₂O₄, N₂O₅, NO, N₂O, He, O₃, Kr, Ne, Xe, Rn and Cl₂; transferringheat to the semiconductor wafer through radiant heat transfer from theat least one wavelength of emitted radiation; and transferring heat tothe surface of the semiconductor wafer through conductive heat transferfrom the radiation-absorptive atmosphere.
 48. A method of annealingglass on a surface of a semiconductor wafer having a substrate,comprising: emitting radiation of at least one wavelength in the rangeof 0.5 to 3.0 μm; absorbing radiation of the at least one wavelength inthe range of 0.5 to 3.0 μm in a radiation-absorptive atmosphere, whereinthe radiation-absorptive atmosphere comprises substantially 10-80 mol %Ar, substantially 10-40 mol % H₂, and substantially 10-50 mol % H₂O;transferring heat to the semiconductor wafer through radiant heattransfer from the at least one wavelength in the range of 0.5 to 3.0 μm;and transferring heat to the glass through conductive heat transfer fromthe radiation-absorptive atmosphere.